rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 3 31 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . rf micro devices ? and rfmd ? are trademarks of rfmd, llc. bluetooth is a trademark owned by bluetooth sig, inc., u.s.a. and licensed for use by rfmd. all other trade names, trademarks, and registered trademarks are the property of their respective owners. ?2013, rf micro devices, in c. 1 of 7 r f pa5201e wifi power amplifier 5.0v, 2.4ghz to 2.5ghz the rfpa5201e is a n integrated power amplifier (pa) designed for high performance wifi systems requiring up to +29dbm linear output power. th e p a is manufactured on an advanced rfmd ingap heterojunction bipolar transistor (hbt) process for optimal efficiency and linear ity (evm) . the rf pa5201e integrates the power detector, biasing and input/output match which reduces the numb er of external components and manufacturability cost. the device is mounted on a 1 4 - pin, 7 x 7mm lga laminate package and meets the rf specifications for 802.11 b/g/ n systems. 1 4 9 10 12 5 6 11 pa _ en rf _ in gnd pa _ en vcc 3 rf _ out gnd gnd input match 2 13 gnd output match gnd 3 7 14 8 vcc vreg vcc 3 pdet bias network power detector functional block diagram ordering information RFPA5201ESB standard 5 piece bag rf pa5201e sq standard 25 piece bag rf pa5201e sr standard 100 piece reel rf pa5201etr13 standard 2500 piece reel rf pa5201e pck - 410 fully assembled evaluation board w/5 piece bag package: laminate, 14 - pin, 7.0mm x 7 .0mm x 1.0mm features p out = 29dbm; evm = - 30db 11n mcs7 input and output matched to 50 high gain: 33db integrated power detector high impedance enable pin high pae design applications ieee 802.11b/g/n wifi systems customer premise equipment (cpe) wireless a ccess points, gateways & routers microcells rfpa5201e
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 3 31 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 2 of 7 rf pa5201e absolute maximum rat ings parameter rating unit supply voltage (rf applied) - 0.5 to + 5.5 v supply voltage (no rf applied) - 0.5 to +6.0 v dc supply current 1800 ma input rf power with 50w output load 10 dbm maximum vswr with no damage 10:1 operating ambient temperature - 40 to +85 c storage temperature - 40 to +150 c m oisture sensitivity level msl 3 caution! esd sensitive device. rfmd green: rohs status based on eu directive 2011/65/eu (at time of this document revision) , halogen free per iec 61249 - 2 - 21, < 1000ppm each of antimony trioxide in polymeric materials and red phosphorus as a flame retardant, and <2% antimony in solder. exceeding any one or a combination of the absolute maximum rating conditions may cause permanent damage to the device. extended application of absolute maximum rating conditions to the device may reduce device reliability. specified typical performance or functional operation of the device under absolute maximum rating conditions is not implied. nominal operating parameters parameter specification unit condition min typ max compliance 802.11b/g/n operating frequency 2412 2484 mhz supply voltage 4.75 5 5.25 v 802.11n ht20 and ht40 mcs7 pa_en voltage high 1.75 2.9 5 v can be tied to vreg when using 2.85v min and sources 12ma typ. pa_en voltage low 0 0.2 v turns pa off v reg voltage high 2.85 2.9 3 v can be tied to pa_en. requires 12ma typ and 2.85v min v reg voltage low 0 0.2 v typical conditions v cc = 5.0v, v reg = 2.9v, pa_en = 2.9v; 11n mcs7 ht20 and ht40, temperature = 25c, unless otherwise noted output power 29 dbm 802.11n ht20 and ht40 mcs7 11n dynamic evm 2.5 3 % second harmonic - 38 - 36 dbm/mhz at rated p out third harmonic - 48 - 45 dbm/mhz gain 31.5 33.5 db gain variation +/ - 1 db o ver 40mhz channel +/ - 2.5 db over temperature of - 40c to +85c power detect range 0.1 2.2 v p out = 0dbm to 30dbm power detect voltage 1.8 1.9 2.0 v at rated p out input return loss - 15 - 12 db in specified frequency band output return loss - 10 - 8 db operating current 8 75 1 000 ma at rated p out quiescent current 350 425 ma v cc = 5.0, v reg = pa_en = 2.9v and rf = off pae (power added efficiency) 18.5 % at rated p out (pa only) power down current 16 ma pa_en = 0v, v cc = 5v, v reg = 2.9v i reg 12 15 ma v cc =5v, pa_en = 2.9v, v reg = 2.9v leakage current 0.5 0.7 ma v cc =5v, v reg = 0v, pa_en=0v
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 3 31 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 3 of 7 rf pa5201e parameter specification unit condition min typ max typical conditions (continued) v cc = 5.0v, v reg = 2.9v, pa_en = 2.9v; 11n mcs7 ht20 and ht40, temperature = 25c, unless otherwise noted turn - on time from setting of v reg s 1 sec output stable to within 90% of final gain turn - off time from setting of v reg s 1 sec stability - 25 33 dbm no spurs above - 47dbm into 4:1 vswr output p1db 35 dbm cw signal spectral mask margin to 802.11n limits 2 db p out = 31dbm; mcs0 ht20 general performance esd human body model 500 v eia/jesd22 - 114a all pins charge device model 1000 v jesd22 - c101c all pins thermal resistance theta_ jc 13 c/w p out - 29dbm; duty cycle - 90%; v cc = 5v; v reg = 2.90v; junction to bottom of laminate package; t ref = 85c theta_ j - ref 18 c/w p out - 29dbm; duty cycle - 90%; v cc = 5v; v reg = 2.90v; junction to bottom of pcb; t ref = 85c junction temperature for long term reliability ( t jmax) 175 c p out - 29dbm; v cc = 5v; v reg = 2.90v; t ref = 85c
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 3 31 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 4 of 7 rf pa5201e evaluation board schematic 1 2 3 4 5 6 7 vreg pa_en gnd gnd vcc hdr_1x7 p1 j 1 rfin pa_en c3 330pf vreg pdet pdet j 2 rfout vcc c1 10 uf 1 4 9 10 12 5 6 11 pa_en rf_in gnd pa_en vcc3 rf_out gnd gnd 2 13 gnd gnd 3 7 14 8 vcc vreg vcc3 pdet c4 1 uf c2 1 uf r1 2 0 ? vcc
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 3 31 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 5 of 7 rf pa5201e pin out 1 4 9 10 12 5 6 11 pa_en rf_in gnd pa_en vcc3 rf_out gnd gnd 2 13 gnd gnd 3 7 14 8 vcc vreg vcc3 pdet package drawing notes 1. shaded area represents pin 1 location. 2. thermal vias for center slug ?b? should be incorporated into the pcb design. the number and size of thermal vias will depend on the application example of the number and size of vias can be found on the rfmd evaluation board layo ut
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 3 31 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 6 of 7 rf pa5201e pcb pattern notes 1. shaded area represents pin 1 location.
rf micro devices inc . 7628 thorndike road, greensboro, nc 27409 - 9421 ds 140 3 31 for sales or technical support, contact rfmd at +1.336.678.5570 or customerservice@rfmd.com . the information in this publication is believed to be accurate. however, no responsibility is assumed by rf micro devices, in c. ("rfmd") for its use, nor for any infringement of patent s or other rights of third parties resulting from its use. no license is granted by implication or otherwise under any patent or patent rights of rfmd. rfmd reserves the right to change component circuitry, recommended application circuitry and specificati ons at any time without prior notice. 7 of 7 rf pa5201e pin names and descriptions pin name description 1 vcc this pin is connected internally to the collectors of rf device. to achieve specified performance, the layout of the pin should match the recommended land pattern. 2 pa_en high impedance enable pin, apply < 0.6vdc to power down the pa. apply 1.75vdc to 5vdc to enable the pa. 3 gnd ground connection. 4 rf_in rf input, is internally matched to 50 ? . dc blocked 5 gnd ground connection. 6 pa_en high impedance enable pin, apply < 0.6vdc to power down the pa. apply 1.75vdc to 5vdc to enable the pa. 7 vreg pa bias voltage. this pin requires regulated supply for best performance. 8 pdet power detector provides an output voltage proportional to the rf output power level. 9 vcc3 this pin is connected internally to the collectors of rf device. to achieve specified performance, the layout of the pin should match the recommended land pattern 10 gnd ground connection. 11 rfout rf outpu t . i nternally matched to 50? and dc blocked 12 gnd ground connection. 13 gnd ground connection. 14 vcc3 this pin is connected internally to the collectors of rf device. to achieve specified performance, the layout of the pin should match the recommended land pattern pkg base gnd ground connection. the back side of the package should be connected to the ground plane through as short connection as possible, e.g., pcb vias under the device are recommended.
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